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| SMD Type HEXFET Power MOSFET KRF7301 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TC = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*2 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ,TSTG R JA Symbol ID ID ID IDM PD Rating 5.7 5.2 4.1 21 2 0.016 12 5 -55 to + 150 62.5 /W W W/ V V/ns A Unit *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 2.6A, di/dt 100A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7301 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = 1.8A, VGS = 0V*1 TJ = 25 , IF =2.6A di/dt = 100A/ s*1 29 22 VGS = 0V VDS = 15V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250A TJ ID = 1mA,Reference to 25 VGS = 4.5V, ID = 2.6A*1 VGS = 2.7V, ID = 2.2A*1 Min 20 Typ Max Unit V 0.044 0.050 0.070 0.70 8.3 1.0 25 100 -100 20 2.2 8.0 9.0 42 32 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 15V, ID = 2.6A*1 VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 V S A IGSS VGS = 12V VGS = -12V ID = 2.6A VDS = 16V VGS = 4.5V,*1 VDD = 10V ID = 2.6A RG = 6.0 RD = 3.8 *1 nA nC ns 51 4.0 nH 6.0 660 280 140 2.5 A 21 1.0 44 33 V ns C pF Body Diode) *2 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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